Si/C superlattice useful for semiconductor devices
AssigneeNanodynamics, Inc.
InventorsChia Gee Wang, Raphael Tsu
Life of this patent
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Abstract
A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers. Structures and devices comprising the superlattice and methods are described.
Claims55
A Si/C superlattice useful for semiconductor devices, comprising a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers.
A structure useful for electronic or opto-electronic devices, said structure comprising a Si/C superlattice comprising a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layer, said superlattice having an upper end in the direction of epitaxial silicon layer growth and a lower end in the opposition direction;
- a top layer comprising epitaxial silicon disposed at said upper end;
- and a low defect density silicon substrate disposed at said lower end.
A structure useful for electronic or opto-electronic devices, said structure comprising a Si/C superlattice comprising a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers, said superlattice having an upper end in the direction of epitaxial silicon layer growth and a lower end in the opposite direction;
- a top layer comprising epitaxial silicon carbide disposed at said upper end;
- and a low defect density silicon substrate disposed at said lower end.
A structure useful for electronic or opto-electronic devices, said structure comprising a Si/C superlattice comprising a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers, said superlattice having an upper end in the direction of epitaxial silicon layer growth and a lower end in the opposite direction;
- a top layer comprising polycrystalline silicon carbide disposed at said upper end;
- and a low defect density silicon substrate disposed at said lower end.
A structure useful for electronic or opto-electronic devices, said structure comprising a Si/C superlattice comprising a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers, said superlattice having an upper end in the direction of epitaxial silicon layer growth and a lower end in the opposite direction;
- and a top layer comprising silicon carbide deposited by CVD disposed at said upper end.
A method for manufacturing low defect silicon carbide for use in semiconductor devices, comprising:
- (a) providing a template consisting of a superlattice comprising a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers;
- (b) depositing epitaxial silicon carbide on said tamplate;
- and
- (c) depositing silcon carbide on said depositing epitaxial silicon carbide by CVD.
Dependencies are inferred from the claim text.