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US 7,023,009 B2Granted
Electrically programmable memory element with improved contacts
AssigneeOvonyx, Inc.
InventorsSergey A. Kostylev, Stanford R. Ovshinsky, Wolodymyr Czubatyi, Patrick Klersy, Boil Pashmakov
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Abstract
An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.
Claims25
An electrically operated, directly overwritable, single-cell memory element, comprising:
- a phase-change memory material;
- a first electrical contact, said first contact being a first thin-film layer having a sidewall electrically coupled to said memory material;
- and
- a second electrical contact electrically coupled to said memory material, said second contact spacedly disposed from said first electrical contact,
- wherein said sidewall of said first thin-film layer at least partially encircles said memory material.
2 more elements
Dependencies are inferred from the claim text.