Ion implanter and method of preventing undesirable ions from implanting a target wafer

A method of using an ion implanter, the method comprising the step of:

• providing an ion implanter having:
• an atomic mass unit analyzing magnet having a radius Ram, and
• a communication interface adapted to monitor implantation parameters including an ion extraction voltage VE of an ion source of implanting ions and a real-time magnetic flux density B of a magnetic field of the AMU analyzing magnet;
• and
• determining in real-time if an ion implanter is implanting a desired ion into a target wafer;
• determining an offset between the Ram and a estimated radius of a circular path of each of a plurality of ions having a desired AMU (m) being implanted (Re);
• providing a predetermined radius tolerance level L
• using a plurality of implantation data to ensure that an AMU of an ion being implanted has less than a 0.5 AMU difference from an AMU of a desired ion to be implanted, wherein the plurality of implantation data is selected from data relating to a plurality of ions each having predefined AMUs, each of the plurality of ions associated with a monitored B and a monitored VE;
• calculating a plurality of implantation radii associated with each of the plurality of ions each having predefined AMUs and signaling an alarm if any of the absolute values of the offset between Ram and Re is larger than the predetermined radius tolerance level L.

A method of using an ion implanter, the method comprising the step of:

• providing an ion implanter having:
• an atomic mass unit analyzing magnet having a radius Ram, and
• a communication interface adapted to monitor implantation parameters including an ion extraction voltage VE of an ion source of implanting ions and a real-time magnetic flux density B of a magnetic field of the AMU analyzing magnet;
• calculating a real-time estimated radius Re of a circular path for each of a plurality of ions having a desired AMU (m) being implanted;
• determining an offset between the Ram and the Re a real-time estimated radius of a circular path of each of a plurality of ions having a desired AMU (m) being implanted (Re);
• using a plurality of implantation data to ensure that an AMU of an ion being implanted has less than a 0.5 AMU difference from an AMU of a desired ion to be implanted, wherein the plurality of implantation data is selected from data relating to a plurality of ions each having predefined AMUs, each of the plurality of ions associated with a monitored B and a monitored VE;
• providing a predetermined radius tolerance level L;
• determining if an absolute value of the offset between Ram and Re is greater than the predetermined radius tolerance level L;
• and
• recalibrating the ion implanter if |Ram−Re|>L.

A method of using an ion implanter, the method comprising the step of:

• providing an ion implanter having:
• an atomic mass unit analyzing magnet having a radius Ram, and
• a communication interface adapted to monitor implantation parameters including an ion extraction voltage VE of an ion source of implanting ions and a real-time magnetic flux density B of a magnetic field of the AMU analyzing magnet;
• determining in real-time if an ion implanter is implanting a desired ion into a target wafer;
• determining an offset between the Ram and a real-time estimated radius of a circular path of each of a plurality of ions having a desired AMU (m) being implanted (Re);
• providing a predetermined radius tolerance level L;
• and
• determining if an absolute value of the offset between Ram and Re is greater than the predetermined radius tolerance level L;
• and
• signaling an alarm if |Ram−Re|>L.

A method of using an ion implanter, the method comprising the step of:

• providing an ion implanter having:
• an atomic mass unit analyzing magnet having a radius Ram, and
• a communication interface adapted to monitor implantation parameters including an ion extraction voltage VE of an ion source of implanting ions and a real-time magnetic flux density B of a magnetic field of the AMU analyzing magnet;
• determining in real-time if an ion implanter is implanting a desired ion into a target wafer;
• determining an offset between the Ram and a real-time estimated radius of a circular path of each of a plurality of ions having a desired AMU (m) being implanted (Re);
• providing a predetermined radius tolerance level L;
• and
• determining if an absolute value of the offset between Ram and Re is greater than the predetermined radius tolerance level L;
• and
• stopping operation of the ion implanter if |Ram−Re|>L.