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AssigneeAdvanced Technology Materials, Inc.
InventorsAlexander S. Borovik, Chongying Xu, Thomas H. Baum, Steven Bilodeau, Jeffrey F. Roeder, Abigail Ebbing, Daniel Vestyck
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An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.
An organosilicon precursor for vapor deposition of a low k, high strength dielectric film, wherein the precursor comprises at least one silicon-pendant oxiranyl functionality and is selected from the group consisting of compounds of Formula (A) and Formula (B):
An organosilicon precursor composition for vapor deposition of a low k, high strength dielectric film, wherein the composition comprises:
A method of forming an oxiranylsilane compound selected from the group consisting of comuounds of Formula (A) and Formula (B):
A metbod of forming a low k, high strength dielectric film on a substrate, comprising vapor depositing said film on the substrate from an organosilicon precursor, wherein said precursor comprises at least one silicon-pendant oxiranyl functionality and is selected from the group consisting of compounds of Formula (A) and Formula (B):
The method of cliam 17, wherein said vapor depositing step comprises flowing said precursor to a vapor deposition locus in a carrier gas.
The method of cliam 25, wherein said carrier gas comprises carbon dioxide.
The method of cliam 25, wherein the precursor and the carrier gas are the only potential sources of oxygen at the vapor deposition locus.
The method of cliam 17, wherein the precursor is selected from the group consisting of:
The method of cliam 17, wherein the precursor further comprises TMCTS.
Dependencies are inferred from the claim text.