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US 7,022,655 B2Granted
Highly polar cleans for removal of residues from semiconductor structures
AssigneeIntel Corporation
InventorsJustin K. Brask, Robert B. Turkot, Jr., Vijayakumar S. Ramachandrarao
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Abstract
Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an ionic liquid in one embodiment.
Claims5
A cleaning material comprising:
- supercritical carbon dioxide;
- an ionic liquid;
- and
- a co-solvent including fluorine substituents.
1 more element
Dependencies are inferred from the claim text.