Method for forming quantum dots using metal thin film or metal powder
AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorsYoung-Ho Kim, Yoon Chung, Hyoung-Jun Jeon, Hwan-Pil Park, Chong-Seung Yoon
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Abstract
Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for forming quantum dots, comprising the steps of (a) mixing a dielectric precursor diluted in a solvent and a metal powder and stirring the mixture, (b) coating the mixture onto a substrate, and (c) heating the resultant substrate. The method can easily control the size, density and uniformity of metal oxide quantum dots.
Claims22
A method for forming quantum dots, comprising the steps of;
- (a) depositing a metal thin layer onto a substrate;
- (b) coating a dielectric precursor onto the metal thin layer;
- and
- (c) heating the resultant substrate, on which said metal thin layer and said dielectric precursor were sequentially stacked, in a furnace in which the temperature is stepwisely elevated to a maximum of 200 to 500° C.
A method for forming quantum dots, comprising the steps of:
- (a) mixing a dielectric precursor diluted in a solvent and a metal powder, and stirring the mixture;
- (b) coating the dielectric precursor solution in which said metal powder was dissolved, onto a substrate;
- and
- (c) heating the resultant substrate with the temperature being stepwisely elevated to a maximum of 200 to 500° C.
Dependencies are inferred from the claim text.