Dielectrics with improved leakage characteristics
AssigneeInternational Business Machines Corporation
InventorsAnthony I. Chou, Robert Benjamin Laibowitz
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Abstract
Methods for forming an oxynitride dielectric in a semiconductor device are disclosed. In the method, an oxynitride layer is grown on a semiconductor device. The oxynitride layer is then annealed at a temperature of about 400° C. for about 20 minutes. Further, the annealing may be performed in a nitrogen ambient or a nitrogen ambient including an oxygen concentration of less than about 1 to about 10 parts per billion.
Claims31
A method of forming a dielectric layer of a semiconductor device, comprising the steps of:
- growing an oxynitride layer of a semiconductor device, wherein the oxynitride layer is grown to a thickness in a range of about 12 to about 24 angstroms;
- and
- annealing the oxynitride layer at a temperature of about 400° C. for about 20 minutes, wherein the annealing is performed in a nitrogen ambient including an oxygen concentration of less than about 1 part per billion.
A method of forming a dielectric layer within a semiconductor device, comprising the steps of:
- growing an oxynitride layer on a semiconductor device;
- annealing the oxynitride layer at a temperature of about 400° C. for about 20 minutes, wherein the annealing is performed in a nitrogen ambient including an oxygen concentration of less than about 1 part per billion;
- and
- capping the annealed oxynitride layer with a gate.
A method for forming a dielectric layer on a semiconductor device, comprising the steps of:
- growing an oxynitride layer on a semiconductor device in a processing chamber;
- preheating the semiconductor device to a temperature of about 400° C.;
- annealing the oxynitride layer for about 20 minutes at a temperature of about 400° C.;
- and
- cooling the semiconductor device with the annealed oxynitride layer.
A method of forming a dielectric layer of a semiconductor device, comprising the steps of:
- growing an oxynitride layer of a semiconductor device;
- depositing a gate electrode layer on the oxynitride layer;
- and
- annealing the oxynitride layer and gate electrode layer at a temperature of about 400° C. for about 20 minutes, wherein the annealing is performed in a nitrogen ambient including an oxygen concentration of about 1 to about 10 parts per billion.
A method of forming a dielectric layer of a semiconductor device, comprising the steps of:
- growing an oxynitride layer of a semiconductor device;
- depositing a gate electrode layer on the oxynitride layer;
- and
- annealing the oxynitride layer and gate electrode layer at a temperature of about 400° C. for about 20 minutes, wherein the annealing is performed in a nitrogen ambient including an oxygen concentration of less than about 1 part per billion.
Dependencies are inferred from the claim text.