Semiconductor device and method of fabricating the same
AssigneeHynix Semiconductor Inc.
InventorChoon Kun Ryu
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Abstract
The present invention is provided to a semiconductor device and a method of fabricating the same. A spacer consisting of SiCxHy or SiOCxHy having a low dielectric constant is formed at the sidewall of a trench or a hole that is formed in an interlayer insulating film. It is therefore possible to reduce the dielectric constant while reducing critical dimension loss of the trench or the hole. Therefore, the present invention has advantages that it can enhance the operating speed of the device by minimizing parasitic capacitance and prohibiting RC delay and crosstalk.
Claims8
A method of fabricating a semiconductor device, comprising the steps of:
- forming an interlayer insulating film on a semiconductor substrate in which various elements for forming the semiconductor device are formed;
- forming a contact hole in the interlayer insulating film;
- forming a SiCxHy film spacer at the sidewall of the contact hole;
- and
- forming a SiOCxHy film by plasma-processing the SiCxHy film spacer.
Dependencies are inferred from the claim text.