Plasma processing method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTomohiro Okumura, Mitsuo Saitoh
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Abstract
A plasma processing method for processing a surface of an object to be processed made of a metal or a semiconductor by applying activated particles generated by a microplasma generated at a pressure of not lower than 10,000 Pa and not higher than three atmospheric pressures to the surface of the object, the method includes removing a natural oxide film on the surface of the object, and etching a part or whole of a region in which the natural oxide film has been removed.
Claims11
A plasma processing method for processing a surface of an object to be processed made of a metal or a semiconductor by applying activated particles generated by a microplasma generated at a pressure of not lower than 10,000 Pa and not higher than three atmospheric pressures to the surface of the object, the method comprising:
- removing a natural oxide film on the surface of the object;
- and
- etching a part or whole of a region in which the natural oxide film has been removed.
Dependencies are inferred from the claim text.