Underlayer film for copper, and a semiconductor device including the underlayer film

Abstract

An underlayer film-forming material for copper, a method for forming the underlayer, an underlayer film for copper, and a semiconductor device including a substrate, the underlayer and copper wiring film, which prevents copper diffusion as well as provides superior adhesion to a copper wiring film, even if the film is thinner than conventional barrier metals. The underlayer film-forming material for copper is formed from a compound represented by a (R1R2)P—(R)n—Si(X1X2X3), wherein at least one of X1, X2, and X3 represents a hydrolysable group; each of R1 and R2 represents an alkyl group; R represents a divalent linear organic group which is selected from an alkylene group, an aromatic ring, and an alkylene group including an aromatic ring; and n is an integer from 1 to 6.

Dependencies are inferred from the claim text.