Method of forming spatial regions of a second material in a first material
AssigneeMicron Technology, Inc.
InventorJoseph E. Geusic
Life of this patent
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Abstract
A surface-transformation method of forming regions of a second material in a first solid material to control the properties of the first solid material is disclosed. The regions of the second material are formed in the first solid material by drilling holes to a predefined depth and at a predefined lattice position. The holes in the first solid material are then filled with a second material and then the first and second materials are heated to a temperature close to the melting point of the first solid material to spontaneously form the regions filled with the second material and embedded in the first solid material at the desired location. A liquid-phase immersion method or a deposition method may be employed to fill the holes in the first solid material.
Claims68
A method of forming at least one region of a second material in a first solid material, said method comprising the steps of:
- forming at least one linear hole in said first solid material;
- filling said at least one linear hole with a second material different from said first solid material, said second material being characterized by a melting temperature lower than the melting temperature of said first solid material;
- and
- heating said first solid material and said second material to form at least one region filled with said second material, said at least one region being formed within, and surrounded by, said first solid material, and below a surface of said first material.
A method of forming at least one region of a second material in a first solid material, said method comprising the steps of:
- forming at least one cylindrical hole in said first solid material;
- immersing said first solid material in a melt of said second material at a first temperature, said melt being characterized by a melting temperature lower than the melting temperature of said first solid material, and filling said at least one cylindrical hole with said melt of said second material;
- and
- subsequently increasing said first temperature of said melt to form at least one region filled with said second material, said at least one region being formed within, and completely surrounded by, said first solid material.
A method of forming at least one spatial region of a second material in a semiconductor material, said method comprising the steps of:
- forming at least one hole in said semiconductor material;
- depositing said second material in said at least one hole, said second material being characterized by a melting temperature lower than the melting temperature of said semiconductor material, and filling said at least one hole with said second material;
- and
- subsequently increasing the temperature of said semiconductor material and of said second material to form at least one spatial region filled with said second material, said at least one spatial region being formed within, and completely surrounded by, said semiconductor material.
A method of modifying the energy band characteristics of an atomic lattice of a semiconductor material, comprising the act of forming at least one unit cell beneath a surface of, and within, said semiconductor material, said unit cell comprising a plurality of spatial regions of a second material arranged in a predefined pattern, said plurality of spatial regions of said second material being surrounded by said semiconductor material, wherein said act of forming said plurality of spatial regions further comprises the act of immersing said semiconductor material in a melt of said second material at a first temperature.
A method of modifying the energy band characteristics of an atomic lattice of a magnetic material, comprising the act of forming at least one unit cell beneath a surface of, and within, said magnetic material, said unit cell comprising a plurality of spatial regions of a second material arranged in a predefined pattern, said plurality of spatial regions of said second material being surrounded by said magnetic material.
A method of modifying the energy band characteristics of an atomic lattice of a ferroelectric material, comprising the act of forming at least one unit cell beneath a surface of, and within, said ferroelectric material, said unit cell comprising a plurality of spatial regions of a second material arranged in a predefined pattern, said plurality of spatial regions of said second material being surrounded by said ferroelectric material.
A method of modifying the energy band characteristics of an atomic lattice of a piezoelectric material, comprising the act of forming at least one unit cell beneath a surface of, and within, said piezoelectric material, said unit cell comprising a plurality of spatial regions of a second material arranged in a predefined pattern, said plurality of spatial regions of said second material being surrounded by said piezoelectric material.
A method of forming a space lattice in a first solid material, said method comprising the steps of:
- forming a first plurality of cylindrical holes in said first solid material;
- filling said first plurality of cylindrical holes with a second material different from said first solid material, said second material being characterized by a melting temperature lower than the melting temperature of said first solid material;
- heating said first solid material and said second material to form a first plurality of spatial regions filled with said second material, said first plurality of spatial regions being formed within, and surrounded by, said solid material and below a surface of said solid material;
- and
- forming a second plurality of cylindrical holes in said solid material, said second plurality of cylindrical holes being located parallel to said first plurality of spatial regions relative to said surface of said solid material.
Dependencies are inferred from the claim text.