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US 7,022,602 B2Granted
Nitrogen-enriched low-k barrier layer for a copper metallization layer
AssigneeAdvanced Micro Devices, Inc.
InventorsHartmut Ruelke, Joerg Hohage, Thomas Werner, Michael Kiene
Life of this patent
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Abstract
The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier layer is provided with a surface modified by plasma treatment. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in the low-k dielectric layer is significantly suppressed, so that in a subsequent photolithography step interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.
Claims17
A method, comprising:
- forming a nitrogen-enriched silicon carbide-containing layer over a substrate;
- modifying at least an exposed surface of said nitrogen-enriched silicon carbide containing layer by treating the exposed surface with an inert plasma atmosphere;
- forming a low-k dielectric layer over said nitrogen-enriched silicon carbide-containing layer;
- performing a patterning process to form a via in said low-k dielectric layer by means of a first resist mask;
- after forming said via, performing an out-gassing step to remove contaminants from said nitrogen-enriched silicon carbide-containing layer;
- and
- after performing said out-gassing step, performing a patterning process to form a trench in said low-k dielectric layer by means of a second resist mask.
4 more elements
A method of forming a metallization layer, the method comprising:
- depositing a nitrogen-containing low-k barrier layer over a substrate;
- modifying a surface of said nitrogen-containing low-k barrier layer by introducing noble gas atoms into a region of said nitrogen-containing low-k barrier layer by exposing said nitrogen containing low-k barrier layer to a plasma treatment comprising a noble gas;
- depositing a low-k dielectric layer over said nitrogen-containing low-k barrier layer;
- patterning said low-k dielectric layer by a lithography process, wherein said modified surface reduces resist poisoning in said lithography process, wherein patterning said low-k dielectric layer includes forming a via in said low-k dielectric layer by means of a first resist mask;
- after forming said via, performing an out-gassing step to remove contaminants from said nitrogen-containing low-k barrier layer;
- after performing said out-gassing step, forming a trench in an upper portion of said low-k dielectric layer by means of a second resist mask;
- and
- forming a metal region in said via and said trench in said patterned low-k dielectric layer.
5 more elements
A method, comprising:
- forming a barrier layer comprised of a nitrogen-enriched silicon carbide-containing layer over a substrate
- exposing a surface of said barrier layer to a plasma ambient comprising a noble gas to thereby increase a concentration of atoms of said noble gas in a region of said barrier layer having a depth, wherein said depth ranges from approximately 0.3–3 nm;
- forming at least one low-k dielectric layer above said barrier layer after said surface of said barrier layer is exposed to said plasma ambient;
- patterning said at least one low-k dielectric layer by a lithography process, wherein said exposed surface reduces resist poisoning in said lithography process, wherein patterning said at least one low-k dielectric layer includes:
- forming a via in said at least one low-k dielectric layer by means of a first resist mask;
- after forming said via, performing an out-gassing step to remove contaminants from said nitrogen-enriched silicon carbide-containing barrier;
- and
- after performing said out-gassing step, forming a trench in an upper portion of said at least one low-k dielectric layer by means of a second resist mask;
- and
- forming a conductive interconnection in said at least one low-k dielectric layer.
7 more elements
Dependencies are inferred from the claim text.