Method of manufacturing semiconductor devices
AssigneeHynix Semiconductor Inc.
InventorsKyong Sik Yoo, Sung Ki Park
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Abstract
A method of manufacturing a semiconductor device is disclosed. The method includes depositing an O3-TEOS oxide film having a good flow-like property under a high adhesive force in order to prevent degradation in the characteristic of the surface of a lower insulating film made of a PE-TEOS oxide film and generation of defect due to the topology difference. Therefore, the disclosed method can improve the electrical characteristic of a semiconductor device and the manufacturing yield.
Claims13
A method of manufacturing a semiconductor device comprising:
- forming a insulating film on a semiconductor substrate;
- forming a conductive layer pattern on the insulating film leaving a portion of the insulating film exposed;
- forming an O3-TEOS oxide film on the conductive layer pattern and the insulating film;
- and
- wherein said O3-TEOS oxide film is deposited in thickness ranging from about 2500 to about 5000 Å and at a temperature ranging from abort 500 to 550° C.
A method of manufacturing a semiconductor device comprising:
- forming a PE-TEOS oxide film on a semiconductor substrate in which transistors and bit lines are formed, the transistors being formed in a cell region and in a peripheral circuit region;
- forming capacitors on the PE-TEOS oxide film of the cell region;
- and
- forming an O3-TEOS oxide film on the entire structure including the capacitors and the PE-TEOS oxide film,
- wherein said O3-TEOS oxide film is deposited in thickness ranging from about 2500 to about 5000 Å at a temperature ranging from abort 500 to 550° C.
A method of manufacturing a semiconductor device comprising:
- forming a insulating film on a semiconductor substrate;
- forming a conductive layer pattern on the insulating film leaving a portion of the insulating film exposed;
- forming an O3-TEOS oxide film on the conductive layer pattern and the exposed portion of the insulating film;
- wherein said O3-TEOS oxide film is deposited in thickness ranging from about 2500 to about 5000 Å and at a temperature ranging from about 500 to about 550° C.;
- and
- wherein a density of O3 ranges from about 135 to about 180 g/m3 during the deposition of said O3-TEOS oxide film.
Dependencies are inferred from the claim text.