Method of producing multilayer interconnection structure
AssigneeSemiconductor Technology Academic Research Center
InventorsShoso Shingubara, Takayuki Takahagi, Zenglin Wang
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Abstract
A method of producing a buried-type multilayer interconnection structure is provided. The method comprises steps of: forming a hole portion in an insulating layer; forming a catalyst layer having average film thickness from 0.2 nm to 10 nm on a surface of the hole portion by a physical vapor deposition method; forming an electroless plating layer on the surface of the hole portion by an electroless plating method using the catalyst layer as a catalyst; and burying up the hole portion with an electrolytic plating layer by an electrolytic plating method using the electroless plating layer as a seed layer.
Claims14
A method of producing a buried-type multilayer interconnection structure, comprising:
- a step of forming a hole portion in an insulating layer;
- a deposition step of forming a catalyst layer having average film thickness from 0.2 nm to 10 nm on a surface of the hole portion by a physical vapor deposition method;
- a step of forming an electroless plating layer on the surface of the hole portion by an electroless plating method using the catalyst layer as a catalyst;
- and
- a burying step of burying up the hole portion with an electrolytic plating layer by an electrolytic plating method using the electroless plating layer as a seed layer.
A method of producing a buried-type multilayer interconnection structure, comprising:
- a step of forming a hole portion in an insulating layer;
- a deposition step of forming a catalyst layer on a surface of the hole portion by a physical vapor deposition method such that the catalyst layer has the average film thickness up to 10 nm and down to the thickness of one-atom layer of atoms of the material of which the catalyst layer is made;
- a step of forming an electroless plating layer on the surface of the hole portion by an electroless plating method using the catalyst layer as a catalyst;
- and
- a burying step of burying up the hole portion with an electrolytic plating layer by an electrolytic plating method using the electroless plating layer as a seed layer.
Dependencies are inferred from the claim text.