Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes

A method for manufacturing gallium nitride (GaN) based transparent conductive oxidized film ohmic electrodes forming a transparent conductive film on a GaN layer, comprising steps of:

• (a) forming a GaN layer on the substrate;
• (b) forming the transparent conductive film of a high work function on a surface of the GaN layer;
• (c) forming a transparent conductive hetero-junction of opposite electric characteristics through an ion diffusion process on the transparent conductive film on the surface of the GaN layer;
• and
• (d) laying a metallic thick film on the transparent conductive hetero-junction for wiring process in later fabrication operations;
• wherein the ion diffusion process generates electron and hole tunneling effect to transform the transparent conductive hetero-junction to an ohmic contact electrode.