SiGe rectification process
AssigneeASM America, Inc.
InventorsChantal J. Arena, Pierre Tomasini, Nyles W. Cody
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Abstract
A method for forming strain-relaxed SiGe films comprises depositing a graded strained SiGe layer on a substrate in which the concentration of Ge is greater at the interface with the substrate than at the top of the layer. The strained SiGe film is subsequently oxidized, producing a strain-relaxed SiGe film with a substantially uniform Ge concentration across the thickness of the film. The relaxed SiGe layer may be used to form a strained silicon layer on a substrate.
Claims25
A method for forming a strain-relaxed SiGe layer on a substrate comprising:
- depositing a reverse graded strained SiGe layer onto a substrate, the reverse graded SiGe layer having a lower surface in contact with the substrate and an upper surface, wherein a first Ge concentration at the lower surface is greater than a second Ge concentration at the upper surface;
- and
- oxidizing the reverse graded SiGe film to produce a strain-relaxed SiGe layer.
A method of forming a strained silicon layer on a substrate comprising:
- depositing a strained SiGe layer comprising a top and a bottom on the substrate, wherein the SiGe layer comprises a reverse graded Ge concentration;
- oxidizing the strained SiGe layer thereby forming a silicon oxide layer over a strain-relaxed SiGe layer;
- removing the oxide;
- and
- depositing a strained silicon layer over the strain relaxed SiGe layer.
A method for forming a strain-relaxed SiGe layer on a substrate comprising:
- depositing a strained SiGe layer onto a substrate, the SiGe layer having a lower surface in contact with the substrate and an upper surface, wherein a first Ge concentration at the lower surface is greater than a second Ge concentration at the upper surface;
- and
- oxidizing the SiGe film to produce a strain-relaxed SiGe layer wherein the concentration of Ge is highest at the lower surface.
Dependencies are inferred from the claim text.