Method for recycling a substrate
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsChristophe Maleville, Fabrice Letertre, Thibaut Maurice, Carlos Mazure, Fredéric Metral
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Abstract
The present invention relates to a method for recycling a substrate that has a residue on its surface and a detachment profile resulting from an implantation process. The method includes removing the residue from the substrate to a level substantially equivalent to that of the detachment profile, thus obtaining a substantially uniform planar surface on the substrate, and then polishing the entire surface of the substrate to eliminate defects.
Claims29
A method for recycling a substrate that has a detachment profile that includes a residual topography on its surface resulting from an ion implantation process, which method comprises:
- applying an impact force to sever the residual topography of the detachment profile;
- and
- polishing the entire surface of the substrate to eliminate defects and to prepare the surface in condition for molecular bonding to another substrate.
A method for recycling a substrate that has a detachment profile that includes a residual topography resulting from an ion implantation process, which method comprises:
- removing the residual topography of the detachment profile by rotating the substrate while exposing at least the residual topography to a chemical substance that reacts with the residue;
- and
- polishing the entire surface of the substrate to eliminate defects and to prepare the surface in condition for molecular bonding to another substrate;
- wherein a region on the surface of the substrate is covered with a protective layer prior to removing the residual topography to avoid chemical attack of that region.
Dependencies are inferred from the claim text.