Method for filling via with metal

A method for making a programmable resistance memory cell, comprising:

• forming a first conductor over a substrate;
• forming an insulator over the substrate and the first conductor;
• forming a via in the insulator extending to the first conductor;
• forming a metallic material on a surface of the insulator and in the via in contact with the first conductor;
• depositing a flowable oxide material over a portion of said metallic material within said via and not over portions of said metallic material on a surface of said insulator;
• removing the metallic material from the surface of the insulator;
• removing said flowable oxide from said via;
• forming a chalcogenide material in the via in contact with the metallic material;
• forming a metal-containing material in the via in contact with the chalcogenide material;
• and
• forming a second conductor on the surface of the insulator and in contact with the metal-containing material.

A method of forming a memory cell, said method, comprising:

• forming a first conductor over a substrate;
• providing an insulator over said first conductor;
• forming a via in said insulator to a surface of said first conductor;
• forming a metallic material layer on a surface of the insulator and within and over a bottom of the via on an exposed surface of said first conductor;
• depositing a flowable oxide material layer over a portion of said metallic material layer at the bottom of said via and not over portions of said metallic material layer on a surface of said insulator;
• removing metallic material layer from the surface of the insulator;
• removing said flowable oxide layer from said via;
• and
• forming a multi-layer structure in said via, said multi-layer structure including at least one chalcogenide material layer and at least one metal containing material layer.