Quantum structure and forming method of the same
AssigneeUnited Microelectronics Corp.
InventorsTing-Chang Chang, Po-Tsun Liu
Life of this patent
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Abstract
A quantum structure and the forming method based on the difference in characteristic of two matters is provided. The forming method includes several steps. At first, providing a first dielectric layer for forming a second dielectric layer thereon. The second dielectric layer has major elements and impurities contained. Treating the second dielectric layer to drive the impurities to form the quantum structure. For example, oxidizing the major elements to drive the impurities in the first dielectric layer to form the quantum structure in said first dielectric layer because the oxidizing capability of the major elements is stronger than that of the impurities.
Claims15
A method of forming a quantum structure, comprising:
- providing a substrate;
- forming a first dielectric layer on said substrate;
- forming a second dielectric layer having a plurality of major element and a plurality of impurity on said first dielectric layer by a chemical vapor deposition process, wherein the oxidizing capability of said major elements is stronger than that of said impurities;
- driving said impurities of said second dielectric layer to form said quantum structure in said first dielectric layer;
- and
- forming a control gate on said second dielectric layer.
A method of forming a quantum structure, comprising:
- providing a semiconductor substrate and a first dielectric layer thereon;
- forming a SiGe layer on said first dielectric layer;
- and
- treating said SiGe layer in an environment, that is full of oxygen, to oxidize said Si atoms and drive said Ge atoms of said SiGe layer in said first dielectric layer to form said quantum structure.
A method of forming a quantum structure, comprising:
- providing a semiconductor substrate and a first dielectric layer thereon;
- forming a SiGeO2 layer on said first dielectric layer by a chemical vapor deposition process;
- and treating said SiGeO2 layer in an environment without oxygen, to oxidize said Si atoms with said oxygen atoms of said SiGeO2 layer and driving said Ge atoms of said SiGeO2 layer in said first dielectric layer to form said quantum structure.
Dependencies are inferred from the claim text.