Lower electrode contact structure and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorJeong-Ju Park
Life of this patent
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Abstract
Lower electrode contact structures and methods of forming the same provide an interface having a large surface area between a lower electrode and the underlying layers. The lower electrode is in contact with a contact plug and an insulation layer in which the contact plug is buried. At least one supporting layer protrudes upright along the outer peripheral edge of the top surface of the contact plug. The interface between the lower electrode and the underlying layers is thus increased by the supporting layer(s) so that the lower electrode and the underlying layers will solidly adhere to each other.
Claims4
A method of forming a lower electrode contact structure of a capacitor, said method comprising:
- forming a contact hole through a lower insulation layer disposed on a semiconductor substrate having an active region so as to expose the active region;
- providing an insulating material on the sides of the contact hole to thereby form a sidewall spacer;
- forming a recessed contact plug in the contact hole and which plug occupies only a lower portion of the contact hole;
- removing a portion of the lower insulation layer until the resulting upper surface thereof is situated beneath the level of an upper portion of the sidewall spacer, whereby the upper portion of the sidewall spacer protrudes above the resulting upper surface of the lower insulation layer;
- and
- subsequently forming a lower electrode of a capacitor on the recessed contact plug, on said portion of the sidewall spacer protruding above the upper surface of the lower insulation layer, and on a portion of the upper surface of the lower insulation layer that borders the contact hole.
Dependencies are inferred from the claim text.