Integrated radio frequency circuits
AssigneeAltera Corporation
InventorsTing-Wah Wong, Chong L. Woo
Life of this patent
Estimating the term…
Abstract
An RF circuit may be formed over a triple well that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing the capacitive coupling from the RF circuits to the substrate, improving the self-resonance frequency of inductors and reducing the coupling of unwanted signals and noise from the underlying substrate to the active circuits and passive components such as the capacitors and inductors. As a result, radio frequency devices, such as radios, cellular telephones and transceivers such as Bluetooth transceivers, logic devices and Flash and SRAM memory devices may all be formed in the same integrated circuit die using CMOS fabrication is processes.
Claims14
A method comprising:
- forming a first triple well including a P-type and an N-type well in a substrate;
- forming a first transistor of a cascode circuit over said first triple well;
- coupling a source region of the first transistor to a drain region of a second transistor of the cascode circuit;
- coupling a gate of the first transistor to a gate of the second transistor;
- biasing the P-type and N-type wells of said first triple well through resistors;
- forming a second triple well including a P-type and an N-type well in the substrate proximate to the first triple well;
- forming an inductive element over said second triple well;
- and
- biasing the P-type and N-type wells of the second triple well through an external voltage supply.
Dependencies are inferred from the claim text.