Compact system module with built-in thermoelectric cooling

A method for packaging an integrated circuit, comprising:

• providing a silicon interposer having opposing sides;
• coupling a semiconductor chip to each of the opposing sides of the silicon interposer;
• coupling the semiconductor chips on each side of the silicon interposer to one another through the silicon interposer by a number of micro-machined vias, wherein the micro-machined vias provide electrical connections between the opposing sides of the silicon interposer;
• and
• coupling a Peltier element to at least one of the of the semiconductor chips, wherein the Peltier element is physically attached to an insulating layer on a back portion of the flip chip, and has a connection lead electrically connecting one surface of the Peltier element to the back portion of the flip chip, and a second connection lead electrically connecting another surface of the Peltier element to a voltage source.

A method for cooling an integrated circuit, comprising:

• providing a silicon interposer having opposing sides;
• coupling a first semiconductor chip to a first side of the silicon interposer;
• coupling a second semiconductor chip to a second side of the silicon interposer, wherein a number of electrical connections through the silicon interposer couple the first semiconductor chip to the second semiconductor;
• forming a metal-to-semiconductor junction which couples to an insulator layer on a back portion of the first semiconductor chip on the first side of the silicon interposer, and having at least one connection lead electrically connecting one surface of the Peltier element to the back portion of the flip chip;
• and
• passing current through the metal-to-semiconductor junction in a direction such that a Peltier cooling effect occurs adjacent to the first semiconductor chip.

A method for heating an integrated circuit, comprising:

• providing a silicon interposer having opposing sides;
• coupling a first semiconductor chip to a first side of the silicon interposer;
• coupling a second semiconductor chip to a second side of the silicon interposer, wherein a number of electrical connections through the silicon interposer couple the first semiconductor chip to the second semiconductor;
• forming a metal-to-semiconductor junction which couples to an insulator layer on a back portion of the first semiconductor chip on the first side of the silicon interposer, and having at least one connection lead electrically connecting one surface of the Peltier element to the back portion of the flip chip;
• and
• passing current through the metal-to-semiconductor junction in a direction such that a Peltier heating effect occurs adjacent to the first semiconductor chip.