Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodes
AssigneeGELcore, LLC
InventorHari S. Venugopalan
Life of this patent
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Abstract
A flip-chip LED device (10) includes a plurality of group III-nitride semiconductor layers (22) defining a p/n junction and including a top p-type group III-nitride layer (28), and a p-contact (30, 30′, 30″) for flip-chip bonding the top p-type group III-nitride layer. The p-contact includes an aluminum layer (32) disposed on the top p-type group III-nitride layer (28), and an interface layer (40, 66, 72, 80) disposed between the aluminum layer and the top p-type group III-nitride layer. The interface layer reduces a contact resistance between the aluminum layer (32) and the top p-type group III-nitride layer (28). The interface layer comprises one or more group III-nitride layers.
Claims14
A method for forming a p-contact on a top p-type group III-nitride layer of a flip-chip LED device, the method comprising:
- forming an interface layer including a tunnel junction on the top p-type group III-nitride layer;
- and
- forming an aluminum layer on the interface layer;
- wherein the interface layer reduces a contact resistance between the aluminum layer and the top p-type group III-nitride layer.
A method for forming a p-contact on a top p-type group III-nitride layer of a flip-chip LED device, the method comprising:
- forming a p-InGaN interface layer on the top p-type group III-nitride layer;
- and
- forming an aluminum layer on the p-InGaN interface layer;
- wherein the p-InGaN interface layer reduces a contact resistance between the aluminum layer and the top p-type group III-nitride layer.
A method for forming a p-contact on a top p-type group III-nitride layer of a flip-chip LED device, the method comprising:
- exposing the top p-type group III-nitride layer to hydrochloric acid;
- subsequent to the exposing to hydrochloric acid, exposing the top p-type group III-nitride layer to a piranha solution including sulfuric acid and hydrogen peroxide wherein a ratio of the sulfuric acid to the hydrogen peroxide in the solution is about 10:1;
- and
- subsequent to the exposing to the piranha solution, disposing an aluminum layer on the top p-type group III-nitride layer.
Dependencies are inferred from the claim text.