Production method of SiC monitor wafer
AssigneeMitsui Engineering & Shipbuilding Co., Ltd.
InventorsIsao Yamada, Jiro Matsuo, Noriaki Toyoda, Kazutoshi Murata, Naomasa Miyatake
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Abstract
The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
Claims7
A production method of an SiC monitor wafer having an ultra-flat and clean surface comprising the steps of:
- depositing SiC of crystal system 3C on a substrate by a CVD (Chemical Vapor Deposition) method;
- detaching the SiC from the substrate;
- flattening the SiC surface by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing);
- thereafter, irradiating the surface with GCIB (Gas Cluster Ion Beam) until the surface roughness becomes Ra=0.5 nm or less, and impurity density of the wafer surface becomes 1×1011 atoms/cm2 or less to thereby produce the SiC monitor wafer.
Dependencies are inferred from the claim text.