High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same
AssigneeInternational Business Machines Corporation
InventorsGuy Moshe Cohen, Qiqing C. Ouyang, Jeremy Daniel Schaub
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Abstract
A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.
Claims27
A device, comprising:
- a photodetector;
- a substrate formed under said photodetector;
- and
- a barrier layer formed over said substrate, wherein said barrier layer comprises a bubble layer, and
- wherein said bubble layer comprises a bubble layer formed by helium implantation and annealing.
A device, comprising:
- a photodetector;
- a substrate formed under said photodetector;
- and
- a barrier layer formed over said substrate, wherein said barrier layer comprises a porous silicon film, wherein said photodetector comprises a PIN detector with one of diffused fingers and implanted fingers.
A device, comprising:
- a photodetector;
- a substrate formed under said photodetector;
- and
- a barrier layer formed over said substrate wherein said barrier layer comprises a bubble layer, and wherein said photodetector comprises a PIN detector with one of diffused fingers and implanted fingers.
A device, comprising:
- a photodetector;
- a substrate formed under said photodetector;
- and
- a barrier layer formed over said substrate, wherein said barrier layer comprises a bubble layer, and wherein said photodetector comprises a metal-semiconductor—metal (MSM) detector.
A wafer, comprising:
- a substrate;
- and
- at least one device formed over said substrate, said at least one device including a photodetector, and a barrier layer formed over said substrate and at least partially localized to said photodetector,
- wherein said barrier layer comprises a bubble layer, and
- wherein the barrier layer is formed only in a portion below the photodetector.
A method of forming a photodiode with a buried bubble layer, comprising:
- providing a semiconductor substrate;
- implanting a dopant into said substrate;
- annealing said substrate to form a bubble layer;
- and
- forming a photodiode device over said substrate.
A method of forming a device, comprising:
- providing a photodetector;
- forming a substrate under said photodetector;
- and
- forming a barrier layer over said substrate, wherein said barrier layer comprises a bubble layer, and
- wherein said forming a barrier layer comprises:
- implanting helium into said substrate;
- and
- annealing said substrate to form said bubble layer.
A method of blocking carriers from a first region to a second region, comprising:
- forming a barrier layer between said first and second regions for eliminating carriers flowing from said first region to said second region,
- wherein said barrier layer comprises a bubble layer, and wherein said bubble layer comprises a bubble layer formed by helium implantation and annealing.
Dependencies are inferred from the claim text.