Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKiyoyuki Morita, Shoji Miyake, Michihito Ueda, Takashi Ohtsuka, Takashi Nishikawa
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Abstract
A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
Claims15
A method for fabricating a semiconductor device including a dielectric film as an element, the method comprising the steps of
- a) forming the dielectric film over a substrate;
- b) irradiating the dielectric film with an electromagnetic wave in the frequency range from 1 GHz to 100 GHz, both inclusive;
- and
- c) forming on the dielectric film, a cover film exhibiting a dielectric constant or a dielectric loss greater than that of the dielectric film, after the step a) has been performed and before the step b) is performed.
- wherein in the step b), the dielectric film and the cover film are heated by absorbing the electromagnetic wave.
Dependencies are inferred from the claim text.