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US 7,022,463 B2Granted
Near-field exposure photoresist and fine pattern forming method using the same
AssigneeCanon Kabushiki Kaisha
InventorsTakako Yamaguchi, Ryo Kuroda
Life of this patent
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Abstract
A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.
Claims11
A fine pattern forming method for transferring a fine pattern onto a workpiece substrate by means of an exposure mask provided with the fine pattern, comprising:
- a step of preparing the exposure mask provided with the fine pattern;
- a step of preparing a near-field exposure photoresist comprising an alkali-soluble novolac resin, a diazide-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent;
- a step of disposing the near-field exposure photoresist on the workpiece substrate;
- a step of silylating an upper layer portion of the near-field exposure photoresist;
- a step of forming a fine pattern at the silylated portion of the photoresist by effecting the near-field exposure;
- and
- a step of forming a fine pattern on the workpiece substrate on the basis of the fine pattern formed at the silylated portion.
4 more elements
A fine pattern forming method, comprising:
- a step of applying on a workpiece substrate a near-field exposure photoresist comprising an alkali-soluble novolac resin, a diazide-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent;
- a step of silylating an upper layer portion of the photoresist in a vapor phase or a liquid phase;
- a step of forming a latent image pattern at the silylated portion of the photoresist by exposing the silylated portion to near-field light;
- a step of developing the latent image pattern formed at the silylated portion with alkali developer;
- a step of transferring the developed pattern at the silylated portion onto the photoresist in a thickness direction of the photoresist by oxygen dry etching;
- and
- a step of transferring the transferred photoresist pattern onto the substrate by dry etching.
4 more elements
Dependencies are inferred from the claim text.