Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating
AssigneeHardide Limited
InventorsJury V. Lakhotkin, Vladimir P. Kuzmin
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Abstract
The inventive coating for diamond and diamond-containing materials represents a coupling of an internal layer, made of tungsten carbide, with an external tungsten layer, both layers being fluorine alloyed. The inventive coating makes it possible to ensure a good adhesion of diamonds and diamond-containing materials to a backing. Methods for applying said coatings are also disclosed.
Claims26
A coating on diamonds and diamond-bearing materials comprising a layer of tungsten alloyed with fluorine in an amount of 0.0004 to 0.3 wt %.
A coating on diamonds and diamond-bearing materials comprising a layer of tungsten monocarbide WC alloyed with fluorine in the amount of 0.0004 to 0.3 wt % and a tungsten layer alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten monocarbide.
A coating comprising a layer of tungsten monocarbide WC alloyed with fluorine in the amount of 0.0004 to 0.3 wt %, a layer of tungsten semi-carbide W2C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten monocarbide, and a tungsten layer alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten semi-carbide.
A coating comprising a layer of tungsten monocarbide WC alloyed with fluorine in the amount of 0.0004 to 0.3 wt %, a layer of tungsten semi-carbide W2C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten monocarbide, a layer of tungsten subcarbide W3C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten semi-carbide, and a tungsten layer alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten subcarbide.
A coating comprising a layer of tungsten monocarbide WC alloyed with fluorine in the amount of 0.0004 to 0.3 wt %, a layer of tungsten semi-carbide W2C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten monocarbide, a layer of tungsten subcarbide W3C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten semi-carbide, a layer of tungsten subcarbide W12C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten subcarbide W3C and a tungsten layer alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten subcarbide W2C.
A coating comprising a layer of tungsten monocarbide WC alloyed with fluorine in the amount of 0.0004 to 0.3 wt %, a layer of tungsten semi-carbide W2C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten monocarbide, a layer of tungsten subcarbide W12C alloyed with fluorine in the amount of 0.0004 to 0.3 wt % is applied on top of the said layer of tungsten semi-carbide W2C and a tungsten layer alloyed with fluorine in the amount of 0.0004 to 0.3 wt % applied on top of the said layer of tungsten subcarbide W12C.
A process for applying a coating to a substrate consisting of diamonds or diamond-bearing materials, comprising placing the substrate in a medium of a charge containing an inert filler and at least one of an alloy consisting of powdered tungsten alloyed with fluorine, the powdered tungsten alloyed with fluorine comprising 0.003–5 wt % of the total weight of the charge, and heating to 700–1200° C.
A process for applying a coating to a substrate consisting of diamonds or diamond-bearing materials, comprising the following steps:
- a) placing the diamond substrate in a chemical vapour deposition reactor with a mixer,
- b) evacuating the reactor to 10 Pa,
- c) heating the said substrate,
- d) supplying tungsten hexafluoride and hydrogen to the reactor,
- e) holding the substrate for such time as is necessary to form the tungsten layer on the substrate,
- f) shutting off the supply of tungsten hexafluoride arid hydrogen,
- g) evacuating the reactor to 0.01 Pa,
- h) reheating (annealing) of the substrate up to the temperature necessary to form tungsten carbides,
- i) and holding the substrate for the time necessary for the tungsten carbides to form.
Dependencies are inferred from the claim text.