US 7,018,933 B2 · Method of forming a metal-insulator-metal capacitor

Abstract

A metal-insulator-metal (MIM) capacitor of a semiconductor device, and a manufacturing method thereof, includes a lower electrode formed of a refractory metal or a conductive compound including the refractory metal, a dielectric film formed of a high dielectric material, and an upper electrode formed of a platinum-family metal or a platinum-family metal oxide. Accordingly, the MIM capacitor satisfies the criteria of step coverage, electrical characteristics and manufacturing costs, as compared to a conventional MIM capacitor in which the upper and lower electrodes are formed of the same material such as a platinum-family metal, a refractory metal or a conductive compound including the refractory metal. The capacitor is especially suitable for mass production in semiconductor fabrication processes.

Claims15

Dependent claims

A method of manufacturing a capacitor, comprising:

forming a lower electrode of a refractory metal or a conductive compound including the refractory metal on a substrate;
forming a reaction prevention film on the lower electrode, the reaction prevention film being formed by depositing a material selected from the group consisting of Si3N4, Al2O3, TaON, HfO2 and ZrO2 using a CVD or ALD technique;
forming a dielectric film of a high dielectric material on the reaction prevention film, the reaction prevention film preventing a reaction between the material of the lower electrode and that of the dielectric film;
and
forming an upper electrode of a platinum-family metal or a platinum-family metal oxide on the dielectric film.

2 more elements

Dependencies are inferred from the claim text.

Method of forming a metal-insulator-metal capacitor

Life of this patent

Method of forming a metal-insulator-metal capacitor

Life of this patent

Abstract

Claims15