Method of forming an isolation film in a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorSung Hoon Lee
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Abstract
Disclosed is a method of forming an isolation film in a semiconductor device. In the process of forming a stack structure of a pad oxide film and a pad nitride film that expose a semiconductor substrate in an isolation region, protrusions of a tail profile are formed at the bottom sidewalls of the pad nitride film and the pad oxide film adjacent to the surface of the substrate, and top corners of a trench are made rounded using the protrusions as an anti-etch film when the substrate is etched, Therefore, it is possible to prevent concentration of an electric field on the top corners of the trench and prohibit generation of the leakage current. Accordingly, reliability of the process and electrical characteristics of the device could be improved.
Claims11
A method of forming an isolation film in a semiconductor device comprising:
- sequentially forming a pad oxide film and a pad nitride film on a semiconductor substrate;
- removing the pad nitride film and the pad oxide film in an isolation region so that tapered, inwardly extending protrusions of a tail profile are formed from the pad nitride and pad oxide films at top corners of the isolation region;
- etching the semiconductor substrate in the isolation region, while using the protrusions of the pad nitride and pad oxide films as an anti-etch film, to form a trench the top corners of which are made rounded;
- and
- filling the trench with an insulating material and then removing remaining portions of the pad nitride film and the pad oxide film on the semiconductor substrate to form an isolation film.
Dependencies are inferred from the claim text.