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US 7,018,924 B2Granted
CMP slurry compositions for oxide films and methods for forming metal line contact plugs using the same
AssigneeHynix Semiconductor Inc.
InventorsJong Goo Jung, Sang Ick Lee
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Abstract
CMP slurries for oxide film and a method for forming a metal line contact plug of a semiconductor device are described herein. When a polishing process of a multi-layer film is performed by using the disclosed CMP slurry for oxide film including an HXOn compound (wherein n is an integer from 1 to 4), a stable landing plug poly can be formed by preventing step differences by reducing interlayer polishing speed differences.
Claims17
A CMP slurry composition for oxide films comprising:
- a solvent;
- an abrasive dispersed in the solvent;
- an HXOn compound, wherein X is selected from the group consisting of F and Br and n is an integer ranging from 2 to 4;
- and
- wherein the CMP slurry composition has a pH ranging from 2 to 5 and a polishing selectivity ratio of a nitride film to an oxide film ranging from 1:1 to 1:3.
2 more elements
Dependencies are inferred from the claim text.