Method of manufacturing a semiconductor integrated circuit device including a hole formed in an insulating film and a first conductive film formed over a bottom region and sidewalls of the hole

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

• (a) forming a hole in an insulating film that is formed over a semiconductor substrate;
• (b) forming a first conductive film over the bottom and sidewalls of said hole;
• (c) forming a second conductive film over said first conductive film and embedding said second conductive film inside of said hole,
• wherein said first conductive film is formed by ion bias sputtering to have a declining portion declining from the sidewalls of said hole toward the center of the bottom at a bottom region of the hole and the thickness of the first conductive film on the sidewall of the hole substantially does not decline along the sidewall surface.

A method of manufacturing a semiconductor integrated circuit device, comprising steps of

• (a) forming a hole in an insulating film formed over a semiconductor substrate;
• (b) forming a first conductive film over the bottom and sidewalls of said hole;
• and
• (c) forming a second conductive film over said first conductive film and embedding said second conductive film inside of said hole, wherein said first conductive film is formed by ion bias sputtering to be smaller in film thickness B at the center of the bottom of said hole than in film thickness A corresponding to a perpendicular line dropped toward the bottom of said hole from a shortest point from the corner of the bottom of said hole to the surface of said first conductive film at a bottom region of the hole and the thickness of the first conductive film on the sidewall of the hole substantially does not change along the sidewall surface.

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

• (a) forming a hole in an insulating film formed over a semiconductor substrate;
• (b) forming a first conductive film over the bottom and sidewalls of said hole;
• and
• (c) forming a second conductive film over said first conductive film and embedding said second conductive film inside of said hole, wherein said first conductive film is formed by ion bias sputtering so that:
• (b1) the film thickness B of said first conductive film at the center of the bottom of said hole is smaller than film thickness A corresponding to a perpendicular line dropped toward the bottom of said hole from the shortest point from the corner of the bottom of said hole to the surface of said first conductive film at a bottom region of the hole and the thickness of the first conductive film on the sidewall of the hole substantially does not change along the sidewall surface;
• and
• (b2) the film thickness B of said first conductive film at the center of the bottom of said hole is smaller than film thickness C corresponding to a perpendicular line dropped toward the sidewalls of said hole from the shortest point from the corner of the bottom of said hole to the surface of said first conductive film at a bottom region of the hole and the thickness of the first conductive film on the sidewall of the hole substantially does not change along the sidewall surface.

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

• (a) forming a first interconnect over a semiconductor substrate;
• (b) forming an insulating film over said first interconnect;
• (c) forming, in said first interconnect and said insulating film, a hole having a bottom at a position deeper than the surface of said first interconnect;
• (d) forming a first conductive film over the bottom and sidewalls of said hole;
• and
• (e) forming a second conductive film over said first conductive film and embedding said second conductive film inside of said hole, wherein said first conductive film is formed by ion bias sputtering so as to be greater in film thickness E at the sidewalls of said first conductive film contiguous to the surface of said first interconnect than in film thickness B at the center of the bottom of said hole at a bottom region of the hole and the thickness of the first conductive film on the sidewall of the hole is substantially conformal along the sidewall surface.

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) forming a first interconnect over a semiconductor substrate;
• (b) forming an insulating film over said first interconnect;
• (c) forming, in said first interconnect and said insulating film, a hole having a bottom at a position deeper than the surface of said first interconnect;
• (d) forming a first conductive film over the bottom and sidewalls of said hole;
• and
• (e) forming a second conductive film over said first conductive film and embedding said second conductive film inside of said hole, wherein said first conductive film is formed by ion bias sputtering such that the film thickness of a portion of said first conductive film formed over sidewalls contiguous to the surface of said first interconnect increases toward the bottom of the hole at a bottom region of the hole and the thickness of the first conductive film on the sidewall of the hole is substantially conformal along the sidewall surface.

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

• (a) forming a hole in an insulating film that is formed over a semiconductor substrate;
• (b) forming a first conductive film over the bottom and sidewalls of said hole;
• and
• (c) forming a second conductive film over said first conductive film and embedding said second conductive film in said hole, wherein said first conductive film is formed by ion bias sputtering such that a the thickness thereof increases from the center of the bottom of said hole toward the sidewalls of said hole at a bottom region of the hole.