Method for implanting atomic species through an uneven surface of a semiconductor layer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBruno Ghyselen, Takeshi Akatsu
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Abstract
A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.
Claims18
A method for implanting atomic species through an uneven surface of a semiconductor layer, which comprises applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity, and then implanting the atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer compared to implantation of the atomic species through the uneven surface without the covering layer.
A method for implanting atomic species through an uneven surface of a semiconductor layer, which comprises:
- applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity, and then implanting the atomic species through the covering layer and uneven surface;
- and
- processing the uneven surface of the covering layer to form a plane surface prior to implanting atomic species to obtain a more uniform depth of implantation of the atomic species in the layer compared to implantation of the atomic species through the uneven surface without the covering layer.
A method for implanting atomic species through an uneven surface of a semiconductor layer, which comprises applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity, and then implanting the atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer compared to implantation of the atomic species through the uneven surface without the covering layer, wherein the uneven surface layer comprises at least one of diamond, Si3N4, AlN, or polycrystalline silicon.
Dependencies are inferred from the claim text.