Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same

A method for fabricating a semiconductor chip comprising:

• preparing an SOI substrate consisting of a base substrate, a buried insulator on the base substrate, and a silicon layer on the insulator;
• removing the silicon layer at a first position of the SOI substrate to form a first isolation in the removed portion, a side face of the silicon layer being covered with the first isolation;
• exposing a top face of the base substrate at a second position, while keeping the side face of the silicon layer covered with the first isolation;
• forming a bulk growth layer from the exposed surface of the base substrate until the top face of the bulk growth layer is in alignment with the top face of the silicon layer;
• forming a second isolation in the bulk growth layer, the second isolation being deeper than the first isolation;
• and
• fabricating devices in the bulk growth layer and the silicon layer on the buried insulator.

A method for fabricating a semiconductor chip comprising:

• preparing an SOI substrate consisting of a base substrate, a buried insulator on the base substrate, and a silicon layer on the insulator;
• removing the silicon layer and the buried insulator in a predetermined area of the SOI substrate to expose the base substrate;
• forming a first part of a trench capacitor in the exposed based substrate, the first part having a first width;
• after forming the first part, forming a bulk growth layer on the exposed base substrate until the top face of the bulk growth layer is in alignment with the top face of the silicon layer on the buried insulator;
• and
• forming a second part of the trench capacitor connected to the first part and having a second width narrower than the first width.

A method for fabricating a semiconductor chip comprising:

• preparing an SOI substrate consisting of a base substrate, a buried insulator on the base substrate, and a silicon layer on the insulator;
• removing the silicon layer and the buried insulator in a predetermined area of the SOI substrate to expose the base substrate;
• forming a bulk growth layer on the exposed base substrate until the top face of the bulk growth layer in alignment with the top face of the silicon layer on the buried insulator;
• forming a dummy pattern in the bulk growth layer, the dummy pattern being deeper than the buried insulator so as to prevent dislocation from expanding into the bulk growth layer from the boundary between the bulk growth layer and the SOI substrate;
• and
• fabricating devices in the bulk growth layer on the opposite side of the boundary between the bulk growth layer and the SOI substrate in relation to the dummy pattern and in the SOI substrate.