Method of forming semiconductor device with capacitor
AssigneeSamsung Electronics Co., Ltd.
InventorsHong-Ki Kim, Jae-Hee Oh, Kwan-Young Youn
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Abstract
A method of forming a semiconductor device comprising: sequentially forming a supporting layer and a sacrificial layer over a semiconductor substrate; forming an opening by patterning the sacrificial layer and the supporting layer; forming a bottom electrode covering the inner wall and the bottom of the opening; removing the sacrificial layer by a wet etch process; and forming a dielectric layer and an upper electrode on the bottom electrode and the supporting layer, wherein the sacrificial layer is formed of a material having a faster wet etch rate than the supporting layer.
Claims10
A method of forming a semiconductor device comprising:
- sequentially forming a supporting layer and a sacrificial layer over a semiconductor substrate;
- forming an opening by patterning the sacrificial layer and the supporting layer;
- forming a bottom electrode covering the inner wall and the bottom of the opening;
- removing the sacrificial layer by a wet etch process;
- and
- forming a dielectric layer and an upper electrode on the bottom electrode and the supporting layer,
- wherein the sacrificial layer is formed of a material having a faster wet etch rate than the supporting layer, and the supporting layer comprises a single layer.
A method of forming a semiconductor device comprising:
- sequentially forming a supporting layer and a sacrificial layer over a semiconductor substrate;
- forming an opening by patterning the sacrificial layer and the supporting layer;
- removing the sacrificial layer by a wet etch process, wherein the sacrificial layer is formed of a material that has a faster wet etch rate than the supporting layer, and the supporting layer comprises a single layer;
- forming a dielectric layer over the supporting layer;
- patterning the dielectric layer and the supporting layer to form a contact hole;
- and
- filling the contact hole with a conductive material to form a contact plug.
Dependencies are inferred from the claim text.