UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing

A method of protecting a SONOS flash memory cell from UV-induced charging, comprising:

• fabricating a SONOS flash memory cell in a semiconductor device;
• depositing over the SONOS flash memory cell at least one UV-protective layer, wherein the UV-protective layer comprises a substantially UV-opaque material and either a sub-layer of a contact cap layer or a contact cap layer, disposed over the SONOS flash memory cell;
• and
• depositing at least one additional UV-protective layer, the at least one additional UV-protective layer comprising at least a sub-layer of a UV-opaque material,
• wherein the UV-opaque material comprises one or more of silicon-rich silicon dioxide, silicon-rich silicon carbide or silicon-rich SiCN.