Suspended gate single-electron device
AssigneeTexas Instruments Incorporated
InventorChristoph Wasshuber
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Abstract
The present invention provides a single-electron transistor device (100). The device (100) comprises a source (105) and drain (110) located over a substrate (115) and a quantum island (120) situated between the source and drain (105, 110), to form tunnel junctions (125, 130) between the source and drain (105, 110). The device (100) further includes a movable electrode (135) located adjacent the quantum island (120) and a displaceable dielectric (140) located between the moveable electrode (135) and the quantum island (120). The present invention also includes a method of fabricating a single-electron device (200), and a transistor circuit (300) that include a single-electron device (310).
Claims5
A method of fabricating a single-electron device, comprising:
- forming a source and drain within or on a substrate;
- placing a quantum island between said source and drain, said quantum island forming tunnel junctions between said source and said drain;
- and
- forming a movable electrode adjacent said quantum island.
Dependencies are inferred from the claim text.