Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH3 nitridation and post-deposition rapid thermal annealing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fang Wang, Chien-Hao Chen, Liang-Gi Yao, Shih-Chang Chen
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Abstract
A method of making a semiconductor device having a silicon dioxide based gate with improved dielectric properties including providing a silicon based substrate having active areas defined therein. Thermally growing a silicon dioxide based gate from the silicon based substrate. Nitriding the silicon dioxide based gate to provide a nitrided silicon dioxide based gate and to increase the dielectric constant of the silicon dioxide based gate without substantially increasing thickness of the silicon dioxide based gate.
Claims16
A method of making a semiconductor device having a gate dielectric of silicon dioxide with improved dielectric properties by doping the gate dielectric of silicon dioxide, comprising:
- providing a silicon based substrate having active areas defined therein;
- thermally growing the gate dielectric of silicon dioxide from the silicon based substrate so that the gate dielectric of silicon dioxide has a thickness less than 22 angstroms;
- doping the gate dielectric of silicon dioxide to provide doped gate dielectric of silicon dioxide and to increase the dielectric constant of doped gate dielectric of silicon dioxide without substantially increasing the thickness of the gate;
- and
- annealing doped gate dielectric of silicon dioxide to a temperature of at least 900° C. or greater.
A method of making a semiconductor device having a gate dielectric of silicon dioxide with improved dielectric properties by nitriding the gate dielectric of silicon dioxide, comprising:
- providing a silicon based substrate having active areas defined therein;
- thermally growing the gate dielectric of silicon dioxide from the silicon based substrate so that the gate dielectric of silicon dioxide has a thickness less than 22 angstroms;
- nitriding the gate dielectric of silicon dioxide to provide a nitrided gate dielectric of silicon dioxide gate and to increase the dielectric constant of the gate dielectric of silicon dioxide without substantially increasing the thickness of the silicon dioxide based gate;
- wherein said growing of the gate dielectric of silicon dioxide comprises heating the silicon based substrate in a wet oxygen atmosphere,
- so that the silicon based substrate has a temperature of at least 900° C.
A method of making a semiconductor device having a gate with improved dielectric properties comprising:
- providing a silicon based substrate having active areas defined therein;
- heating the silicon based substrate in the presence of oxygen to grow a gate dielectric of silicon dioxide;
- heating the gate dielectric of silicon dioxide in the presence of a NH3 to provide a nitrided gate dielectric of silicon dioxide and to increase the dielectric constant of the gate dielectric of silion dioxide without substantially increasing the thickness of the gate dielectric of silicon dioxide, and further comprising driving out any hydrogen remaining in the nitrided gate dielectric of silicon dioxide.
Dependencies are inferred from the claim text.