Method for fabricating thin-film transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
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Abstract
A process for fabricating thin film transistors is disclosed, which comprises a two-step laser annealing process as follows: crystallizing the channel portion by irradiating the channel portion with an irradiation beam; and modifying the electric properties of the source and the drain by irradiating the source and the drain with an irradiation beam in a step independent to the first step of crystallizing the channel portion.
Claims26
A method of manufacturing a semiconductor device comprising:
- forming a non-single crystal semiconductor film over a substrate wherein said non-single crystal semiconductor film includes a region to become a channel region;
- irradiating the non-single crystal semiconductor film with a first laser in order to crystallize the non-single crystal semiconductor film;
- forming source and drain regions with said region to become a channel region therebetween;
- activating the source and drain regions by irradiating the source and drain regions with a second laser, wherein said region to become a channel region is irradiated with said second laser simultaneously,
- wherein an energy density of the first laser is larger than an energy density of the second laser.
A method of manufacturing a semiconductor device comprising:
- forming a non-single crystal semiconductor film over a substrate wherein said non-single crystal semiconductor film includes a region to become a channel region;
- irradiating the non-single crystal semiconductor film with a first laser in order to crystallize the non-single crystal semiconductor film;
- forming source and drain regions with said region to become a channel region therebetween;
- activating the source and drain regions by irradiating the source and drain regions with a second laser, wherein said region to become a channel region is irradiated with said second laser simultaneously;
- and
- forming a gate insulating film on the region to become a channel region;
- wherein an energy density of the first laser is larger than an energy density of the second laser.
A method of manufacturing a semiconductor device comprising:
- forming a non-single crystal semiconductor film over a substrate wherein said non-single crystal semiconductor film includes a region to become a channel region;
- irradiating the non-single crystal semiconductor film with a first excimer laser in order to crystallize the non-single crystal semiconductor film;
- forming source and drain regions with said region to become a channel region therebetween;
- activating the source and drain regions by irradiating the source and drain regions with a second excimer laser, wherein said region to become a channel region is irradiated with said second laser simultaneously,
- wherein an energy density of the first laser is larger than an energy density of the second laser.
A method of manufacturing a semiconductor device comprising:
- forming a non-single crystal semiconductor film over a substrate wherein said non-single crystal semiconductor film includes a region to become a channel region;
- irradiating the non-single crystal semiconductor film with a first excimer laser in order to crystallize the non-single crystal semiconductor film;
- forming source and drain regions with said region to become a channel region therebetween;
- activating the source and drain regions by irradiating the source and drain regions with a second excimer laser, wherein said region to become a channel region is irradiated with said second laser simultaneously;
- and
- forming a gate insulating film on the region to become a channel region;
- wherein an energy density of the first laser is larger than an energy density of the second laser.
Dependencies are inferred from the claim text.