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US 7,018,863 B2Granted
Method of manufacture of a resistance variable memory cell
AssigneeMicron Technology, Inc.
InventorsJohn T. Moore, Kristy A. Campbell, Terry L. Gilton
Life of this patent
Estimating the term…
Abstract
The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal containing layer recessed in the opening; forming a resistance variable material in the opening and over the metal containing layer; and processing the resistance variable material and metal containing layer to produce a resistance variable material containing a diffused metal within the opening.
Claims89
A method of fabricating a resistance variable memory element, comprising the acts of:
- forming a first electrode;
- forming an insulating layer over said first electrode;
- forming an opening in said insulating layer to expose a portion said first electrode;
- forming a metal containing layer in said opening;
- forming a resistance variable material over said metal containing layer in said opening;
- processing said resistance variable material and metal containing layer to diffuse metal from said metal containing layer into said resistance variable material to form a metal containing resistance variable material in said opening;
- selectively etching any remaining resistance variable material after said processing to leave said metal containing resistance variable material in said opening;
- and
- forming a second electrode over said insulating layer and over said metal containing resistance variable material.
6 more elements
A method of fabricating a resistance variable memory element, comprising the acts of:
- forming a first electrode on a substrate:
- forming an insulating layer overlying said first electrode;
- etching an opening in said insulating layer to expose said first electrode;
- depositing a silver containing material in said opening and overlying said insulating layer;
- planarizing said silver containing material to expose said insulating layer;
- recessing said silver containing material in said opening;
- depositing a germanium-selenium layer overlying said recessed silver containing material and said insulating layer;
- processing said germanium-selenium layer and said silver containing material with light irradiation to form a silver-germanium-selenium material in said opening;
- subsequent to said processing act, removing any residual germanium-selenium layer overlying said insulating layer;
- and
- forming a second electrode overlying said insulating layer and said silver-germanium-selenium material formed in said opening.
8 more elements
A method of fabricating a resistance variable memory element, comprising the acts of:
- forming a first electrode on a substrate:
- forming an insulating layer overlying said first electrode;
- etching an opening in said insulating layer to expose a portion of said first electrode;
- depositing a silver containing material in said opening and overlying said insulating layer;
- planarizing said silver containing material to expose said insulating layer;
- recessing said silver containing material in said opening;
- depositing a first germanium-selenium layer over said recessed silver containing material in said opening and overlying said insulating layer;
- processing said first germanium-selenium layer and said silver containing material with light irradiation to form a silver-germanium-selenium material in said opening;
- removing any residual portions of said first germanium-selenium layer outside an area of said opening;
- depositing a silver-selenide layer overlying said insulating layer and said silver-germanium-selenium material formed in said opening;
- forming a second germanium-selenium layer over said silver-selenide layer;
- and
- forming a second electrode over said second germanium-selenium layer.
10 more elements
A self-aligning process for forming a resistance variable memory element, comprising the acts of:
- forming an opening in an insulating layer to expose a surface of an underlying conductor;
- forming a metal containing layer recessed in said opening;
- forming a glass material on said metal containing layer within said opening and over said insulating layer;
- processing said glass material to diffuse metal from said metal containing layer into said glass material to form a metal doped glass material within said opening;
- subsequent to said processing act, removing any residual glass material formed over said insulating layer and outside an area of said opening;
- and
- forming a second conductor over said metal doped glass material.
4 more elements
A method of fabricating a resistance variable memory element, comprising the acts of:
- forming an insulating layer having an opening therein;
- forming a silver layer recessed in said opening;
- forming a germanium-selenium layer in said opening and overlying said silver layer;
- processing said silver layer and said germanium-selenium layer to produce a germanium-selenium material having diffused silver therein;
- and
- selectively etching any remaining portion of the germanium-selenium material which does not have silver diffused therein after said processing.
3 more elements
A method of fabricating a resistance variable memory element, comprising the acts of:
- forming an insulating layer having an opening therein;
- forming a metal containing layer in said opening;
- forming a resistance variable material over said metal containing layer in said opening;
- processing said resistance variable material and metal containing layer to diffuse metal from said metal containing layer into said resistance variable material to form a metal containing resistance variable material in said opening;
- and
- after said processing, selectively etching any remaining resistance variable material that does not have said metal diffused therein.
3 more elements
Dependencies are inferred from the claim text.