Method of fabricating AlGaInP light-emitting diode and structure thereof
AssigneeEpistar Corporation
InventorsTien-Fu Liao, Chih-Sung Chang, Tzer-Perng Chen
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Abstract
A soft transparent adhesive layer is utilized to bond a transparent substrate material onto an AlGaInP light-emitting diode epitaxy on a GaAs substrate, and the GaAs substrate is next removed entirely. Then, a mesa etching process is performed to form a first top surface and a second top surface on the AlGaInP light-emitting diode epitaxy for respectively exposing an n-type layer and a p-type layer in the AlGaInP light-emitting diode epitaxy. Next, a metal reflective layer and a barrier layer are formed on the AlGaInP light-emitting diode epitaxy in turn, and electrodes are finally fabricated on the barrier layer.
Claims13
A method of fabricating an AlGaInP light-emitting diode, comprising the steps of:
- forming at least an AlGaInP light-emitting diode epitaxy on a substrate;
- utilizing a soft transparent adhesive layer to bond a transparent substrate material onto the AlGaInP light-emitting diode epitaxy, wherein the soft transparent adhesive layer is between the transparent substrate material and the AlGaInP light-emitting diode epitaxy;
- removing the substrate to expose entirely the AlGaInP light-emitting diode epitaxy;
- etching the AlGaInP light-emitting diode epitaxy to remove a portion of the AlGaInP light-emitting diode epitaxy to a depth so the AlGaInP light-emitting diode epitaxy has a first top surface and a second top surface, wherein the first top surface has a greater distance than the second top surface from the transparent substrate material, the first top surface has a first-type electricity, and the second top surface has a second-type electricity;
- forming a metal reflective layer on the first top surface and a portion of the second top surface of the AlGaInP light-emitting diode epitaxy;
- and
- fabricating a first electrode and a second electrode on the metal reflective layer, wherein the first electrode is above the first top surface of the AlGaInP light-emitting diode epitaxy, and the second electrode is above the second top surface of the AlGaInP light-emitting diode epitaxy.
A method of fabricating an AlGaInP light-emitting diode, comprising the steps of:
- forming at least an AlGaInP light-emitting diode epitaxy on a substrate;
- roughening the AlGaInP light-emitting diode epitaxy to form a rough surface;
- utilizing a soft transparent adhesive layer to bond a transparent substrate material onto the AlGaInP light-emitting diode epitaxy, wherein the soft transparent adhesive layer is between the transparent substrate material and the AlGaInP light-emitting diode epitaxy;
- removing the substrate to expose entirely the AlGaInP light-emitting diode epitaxy;
- etching the AlGaInP light-emitting diode epitaxy to remove a portion of the AlGaInP light-emitting diode epitaxy to a depth so the AlGaInP light-emitting diode epitaxy has a first top surface and a second top surface, wherein the first top surface has a greater distance than the second top surface from the transparent substrate material, and the first top surface and the second top surface have a first-type electricity and a second-type electricity, respectively;
- forming a metal reflective layer on the first top surface and a portion of the second top surface of the AlGaInP light-emitting diode epitaxy;
- forming a barrier layer on the metal reflective layer;
- and
- fabricating a first electrode and a second electrode on the metal reflective layer, wherein the first electrode is above the first top surface of the AlGaInP light-emitting diode epitaxy, and the second electrode is above the second top surface of the AlGaInP light-emitting diode epitaxy.
Dependencies are inferred from the claim text.