Light absorbing layer producing method
AssigneeHonda Giken Kogyo Kabushiki Kaisha
InventorsSatoshi Aoki, Masako Kimura, Masanori Kosugi
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Abstract
A method of producing a light absorbing layer of CIGS for a solar cell by forming a precursor film on a back electrode and treating the precursor film in a selenium atmosphere, wherein an alkali layer is formed on the back electrode by dipping the back electrode in an aqueous solution containing alkali metals and drying and then a laminated precursor is formed on the alkali layer. By applying this method, the alkali layer whose components of Ia-group elements are diffused into the light absorbing layer to improve power conversion efficiency thereof can be easily formed with no fear of denaturing the back electrode and peeling of the layer at the boundary between the light absorbing layer and the back electrode.
Claims12
A light absorbing layer producing method for fabricating a light absorbing layer of CIGS by forming a thin-film precursor on a back electrode layer of a compound semiconductor solar cell and by treating the formed precursor by heat in a selenium atmosphere, wherein an alkali layer is formed on the back electrode layer by dipping the back electrode in an aqueous solution containing alkali metals and drying the dipped surface and the precursor is then formed on the alkali layer and treated by heat in a selenium (Se) atmosphere.
Dependencies are inferred from the claim text.