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US 7,018,853 B1Granted
Stepped structure for a multi-rank, stacked polymer memory device and method of making same
AssigneeIntel Corporation
InventorsJian Li, Xiao-Chun Mu
Life of this patent
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Abstract
The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures.
Claims17
A process of forming a polymer memory device, comprising:
- forming a first topology over a substrate;
- forming a subsequent topology over the first topology;
- forming a first polymer memory structure at the first topology;
- forming a subsequent polymer memory structure at the subsequent topology and over the first polymer memory structure, wherein the subsequent polymer memory structure is larger than the first polymer memory structure;
- forming a contact via coupled to the first polymer memory structure, wherein forming a first polymer memory structure and forming a subsequent polymer memory structure further comprises:
- forming a first electrode over the substrate;
- forming a first polymer memory layer over the first electrode;
- forming a second electrode over the first polymer memory layer;
- forming a second polymer memory layer over the second electrode, wherein the second polymer memory layer is larger than the first polymer memory layer, the second polymer memory layer is concentrically disposed over the first polymer memory layer, and the second polymer memory layer is contacting the first polymer memory layer;
- and
- forming a third electrode over the second polymer memory layer.
8 more elements
A polymer memory device comprising:
- a first polymer structure disposed on a substrate;
- a subsequent polymer structure disposed over the first polymer structure, wherein the subsequent polymer structure is larger than the first polymer structure and wherein the subsequent polymer structure is concentrically disposed over the first ferroelectric polymer structure;
- a contact via coupled to the first polymer structure, wherein the first polymer structure and the subsequent polymer structure comprise:
- a first electrode disposed over the substrate;
- a first polymer memory layer disposed over the first electrode;
- a second electrode disposed over the first polymer memory layer;
- a second polymer memory layer disposed over the second electrode, wherein the second polymer memory layer is larger than the first polymer memory layer, the second polymer memory layer is concentrically disposed over the first polymer memory layer, and the second polymer memory layer contacts the first polymer memory layer;
- and
- a third electrode disposed over the second polymer memory layer.
6 more elements
Dependencies are inferred from the claim text.