Method for forming a ruthenium metal layer
AssigneeMicron Technology, Inc.
InventorSam Yang
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Abstract
A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide with hydrogen, which results in a ruthenium metal layer. By varying the oxygen flow rate during the formation of ruthenium oxide, a ruthenium metal layer having various degrees of smooth and rough textures can be formed.
Claims11
A method for forming a ruthenium metal layer comprising:
- providing a ruthenium precursor and oxygen in a chamber to form a ruthenium oxide layer;
- and
- heating said ruthenium oxide layer in the presence of a hydrogen-rich gas to convert said ruthenium oxide layer to a smooth-surfaced ruthenium metal layer.
A method for forming a ruthenium metal layer comprising:
- providing a ruthenium precursor at a flow rate of between about 10 sccm and about 2000 sccm and oxygen at a flow rate of between about 10 sccm and about 1000 sccm in a chamber at a pressure of between about 0.1 Torr and about 90 Torr and at a temperature of between about 100° C. and about 600° C. to form a ruthenium oxide layer;
- and
- heating said ruthenium oxide layer to a temperature of between about 400° C. to about 800° C. for between about 10 seconds and about five minutes at a pressure of between about 1 Torr and about 760 Torr in the presence of a hydrogen-rich gas at a flow rate of between about 100 sccm and about 10,000 sccm to convert said ruthenium oxide layer to a smooth-surfaced ruthenium metal layer.
A method used to form a ruthenium metal layer comprising:
- forming a ruthenium oxide layer in a chamber by providing a ruthenium precursor at a flow rate of between about 10 sccm and about 2000 sccm and oxygen at a flow rate of between about 10 sccm and about 1000 sccm at a temperature of between about 100° C. and about 600° C. and a pressure of between about 0.1 Torr to about 90 Torr;
- and
- annealing said ruthenium oxide layer at a temperature of between about 400° C. and about 800° C. in the presence of a hydrogen-rich gas at a flow rate of between about 100 sccm and about 10,000 sccm and a chamber pressure of between about 1 Torr and about 760 Torr to convert said ruthenium oxide layer to a smooth-surfaced ruthenium metal layer.
Dependencies are inferred from the claim text.