Method and apparatus for forming tapered waveguide structures
AssigneeGeneral Electric Company
InventorsThomas Bert Gorczyca, Christopher James Kapusta, Samhita Dasgupta, Stacey Joy Goodwin
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Abstract
A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure includes defining a stamping pattern upon the surface of a silicon wafer, and removing portions of the silicon wafer surface in accordance with the stamped pattern, thereby creating tapered vertical surfaces within the wafer.
Claims10
A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure, the method comprising:
- defining a stamping pattern upon the surface of a silicon wafer;
- and
- removing portions of said silicon wafer surface by crystallographic etching thereof in accordance with said stamping pattern, thereby creating tapered vertical surfaces within said wafer, wherein said silicon wafer is initially formed at an off-axis angle with respect to a <100> crystal orientation.
A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure, the method comprising:
- defining a stamping pattern upon the surface of a silicon wafer;
- and
- removing portions of said silicon wafer surface by crystallographic etching thereof in accordance with said stamping pattern, thereby creating tapered vertical surfaces within said wafer, wherein an angle of said tapered vertical surfaces with respect to a normal to said surface of said silicon wafer is approximately 45 degrees, wherein said silicon wafer is initially formed at an off-axis angle with respect to a desired crystal orientation.
A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure, the method comprising:
- defining a stamping pattern upon the surface of a silicon wafer;
- and
- removing portions of said silicon wafer surface by crystallographic etching thereof in accordance with said stamping pattern, thereby creating tapered vertical surfaces within said wafer, wherein an angle of said tapered vertical surfaces with respect to a normal to said surface of said silicon wafer is approximately 45 degrees.
Dependencies are inferred from the claim text.