Method of manufacturing electronic device
AssigneeKabushiki Kaisha Toshiba
InventorsIkuo Uematsu, Naoya Hayamizu
Life of this patent
Estimating the term…
Abstract
A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of −1 to 3.
Claims12
A method of manufacturing an electronic device, comprising:
- forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate;
- patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring;
- and
- treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of −1 to 3.
A method of manufacturing an electronic device, comprising:
- forming a first layer wiring made of aluminum or an aluminum alloy on the surface of a first layer insulating film on a substrate;
- forming a second layer insulating film on the first layer insulating film including the first layer wiring;
- subjecting the second layer insulating film to a reactive ion etching with a resist pattern used as a mask so as to form a via hole extending to reach the surface of the first layer wiring;
- treating the surface of the second layer insulating film including the via hole with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of −1 to 3;
- forming a conductive barrier layer on at least the inner surface of the via hole;
- forming a conductive material film on the surface of the second layer insulating film including the inner region of the via hole having the barrier layer formed on the inner surface;
- and
- removing the conductive material film and the conductive barrier layer by a chemical mechanical polishing so as to form a via fill.
Dependencies are inferred from the claim text.