Apparatus including chuck and matching box

#This application claims the benefit of Korean Patent Application No. 2002-6555, filed on Feb. 5, 2002 in Korea, which is hereby incorporated by reference for all purposes as if fully set forth herein.

#1. Field of the Invention

#The present invention relates to an apparatus for a semiconductor device and more particularly, to a chuck supporting a substrate and controlling a temperature.

#The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.

#In the drawings:

#FIG. 1 is a schematic perspective view showing a chuck of a related art apparatus for semiconductor device;

#Reference will now be made in detail to the illustrated embodiments of the present invention, which are illustrated in the accompanying drawings.

#FIG. 2 is a schematic decomposed perspective view showing an apparatus including a chuck and a matching box according to an embodiment of the present invention. The chuck according to the present invention includes a fixing means to fix the matching box onto the chuck. The present invention can be applied to all kinds of chucks equipped in a chamber defining a closed reaction region and treating a substrate with a plasma. The chuck supports the substrate and adjusts a temperature of the substrate during the substrate treating process.

#As shown in FIG. 2, a chuck 130 includes a chuck body 130a and a chuck supporter 130b. The chuck body 130a having a plate shape is horizontally disposed in a closed reaction region of a chamber (not shown) and a substrate is loaded thereon. The chuck supporter 130b having a pipe shape supports the chuck body 130a and penetrates a surface of the chamber. The chuck supporter 130b has one end portion inside of the chamber and the other end portion outside of the chamber. The chuck body 130a and a base lid 130c are combined with the one end portion and the other end portion of the chuck supporter 130b, respectively. Moreover, an RF electrode controlling an impact energy of plasma ions generated in the chamber, a temperature control unit and a direct current (DC) electrode for holding the substrate can be equipped in the chuck body 130a. The chuck body 130a is horizontally combined with one end of the chuck supporter 130b. Each electrode is connected to each of a plurality of terminals 132 protruded from the base lid 130c. Each of the plurality of terminals 132 is connected to an external means supplying each electrode with a required element. In another embodiment, the plurality of terminals 132 can be formed on the other end portion of the chuck supporter 130b.