Semiconductor-on-insulator silicon wafer and method of formation
AssigneeTranslucent, Inc.
InventorPeter B. Atanackovic
Life of this patent
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Abstract
A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second silicon substrates. A first thin layer of silicon dioxide is formed on one substrate and a second thicker layer of silicon dioxide is formed on the other substrate. A layer of rare earth is deposited, generally by evaporation, on the thicker layer of silicon dioxide. The rare earth layer is placed on the thin silicon dioxide layer and the structure is bonded by annealing to form a layer of rare earth silicon dioxide. A portion of the one substrate is removed to form a thin crystalline active layer on preferably the rare earth silicon dioxide layer, but potentially on the thicker silicon dioxide layer.
Claims18
A method of fabricating a semiconductor-on-insulator semiconductor wafer comprising the steps of:
- providing a first semiconductor substrate;
- forming a first insulating layer on a surface of the first semiconductor substrate;
- providing a second semiconductor substrate;
- forming a second insulating layer on a surface of the second semiconductor substrate;
- depositing a thin layer of rare earth on one of the first insulating layer and the second insulating layer;
- positioning the thin layer of rare earth on the other of the first insulating layer and the second insulating layer to provide a combined structure and annealing the combined structure to produce a molecular reaction between the rare earth and the one of the first insulating layer and the second insulating layer;
- and
- removing a portion of one of the first semiconductor substrate and the second semiconductor substrate to form a thin crystalline active layer.
A method of fabricating a semiconductor-on-insulator semiconductor wafer comprising the steps of:
- providing a first silicon substrate;
- forming a first layer of silicon dioxide on a surface of the first silicon substrate;
- providing a second silicon substrate;
- forming a second layer of silicon dioxide on a surface of the second silicon substrate, including forming the first layer of silicon dioxide substantially thinner than the second layer of silicon dioxide;
- depositing a thin layer of rare earth on the second layer of silicon dioxide;
- positioning the thin layer of rare earth on the first layer of silicon dioxide to provide a combined structure and annealing the combined structure to produce a molecular reaction between the rare earth and the first layer of silicon dioxide so as to provide a layer of rare earth silicon dioxide;
- and
- removing a portion of the first silicon substrate to form a thin crystalline active layer.
A semiconductor-on-insulator semiconductor wafer comprising:
- a first silicon substrate;
- a silicon dioxide layer on a surface of the first silicon substrate;
- a second silicon substrate;
- a rare earth silicon dioxide layer on a surface of the second silicon substrate;
- the silicon dioxide layer being bonded to the rare earth silicon dioxide layer, thereby bonding the first silicon substrate to the second silicon substrate;
- and
- a portion of one of the first silicon substrate and the second silicon substrate being removed to form a thin crystalline active layer on one of the silicon dioxide layer and the rare earth silicon dioxide layer.
Dependencies are inferred from the claim text.