Customized polishing pad for selective process performance during chemical mechanical polishing
AssigneeKoninklijke Philips Electronics N.V.
InventorsCharles Franklin Drill, Milind Weling
Life of this patent
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Abstract
The present invention comprises a customized polishing pad for use in a wafer polishing machine. The polishing pad of the present invention includes a polishing surface integral with the polishing pad. The polishing surface is adapted to frictionally contact a wafer in the polishing machine, thereby polishing the wafer. The polishing surface of the polishing pad includes at least two areas, where each area is adapted to frictionally contact the wafer and achieve a polishing effect specific for that area. A customized polishing effect is achieved by the polishing pad of the present invention when the wafer is selectively moved frictionally against the at least two areas by the wafer polishing machine.
Claims12
A polishing pad suitable for chemical mechanical polishing of wafers, comprising:
- a circular base layer and an overlaying circular top layer, the overlying circular top layer forming the polishing surface of the polishing pad;
- wherein the polishing surface of the polishing pad has at least two polishing regions thereon, the at least two polishing regions having distinct polishing characteristics, and wherein the at least two polishing regions are disposed on the polishing pad as concentric annular regions;
- and
- wherein the circular base layer comprises at least two concentric annular regions, each of the at least two base layer concentric annular regions disposed so as to underlie a corresponding one of the at least two polishing regions.
A polishing pad suitable for chemical mechanical polishing of wafers, comprising:
- a linear base layer and an overlying top layer, the overlying top layer forming the polishing surface of the polishing pad;
- wherein the polishing surface of the polishing pad has at least two polishing regions thereon, the at least two polishing regions having distinct polishing characteristics, and wherein the at least two polishing regions are disposed on the polishing pad as parallel linear regions;
- and
- wherein the linear base layer comprises at least two parallel linear regions, each of the at least two base layer parallel linear regions disposed so as to underlie a corresponding one of the at least two polishing regions.
Dependencies are inferred from the claim text.