Structure with through hole, production method thereof, and liquid discharge head
AssigneeCanon Kabushiki Kaisha
InventorsYukihiro Hayakawa, Genzo Monma, Masato Kamiichi
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Abstract
A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.
Claims7
A structure comprising a semiconductor substrate, a silicon oxide film and a silicon nitride film provided on a first principal surface of said semiconductor substrate, an element provided between said silicon oxide film and said silicon nitride film, and a through hole penetrating said semiconductor substrate, said silicon oxide film, and said silicon nitride film,
- wherein said silicon nitride film is formed in contact with an upper surface of said silicon oxide film at least at a portion of said semiconductor substrate adjacent to said through hole, and said element provided between said silicon oxide film and said silicon nitride film comprises a heating resistor and a MOS transistor for causing a current to flow into said heating resistor.
A liquid discharge head comprising:
- a recording head substrate, said recording head substrate comprising a semiconductor substrate, a silicon oxide film and a silicon nitride film provided on a first principal surface of said semiconductor substrate, a heating resistor and a MOS transistor for causing a current to flow into said heating resistor provided between said silicon oxide film and said silicon nitride film, and a supply opening penetrating said semiconductor substrate, said silicon oxide film, and said silicon nitride film and adapted to supply a liquid;
- and
- a discharge opening provided so as to face said heating resistor,
- wherein said silicon nitride film is formed so as to be in contact with an upper surface of said silicon oxide film at least at a portion of said semiconductor substrate adjacent to said supply opening.
Dependencies are inferred from the claim text.